depletion region वाक्य
उदाहरण वाक्य
मोबाइल
- The width of the depletion region grows larger with higher voltage.
- The high doping reduces the length of the depletion region because
- Hence, electrons can easily tunnel through the depletion region.
- Inside the depletion region, both diffusion current and drift current are present.
- It also assumes that the R G current in the depletion region is insignificant.
- This is called a " depletion region ".
- With increased doping of the semiconductor, the width of the depletion region drops.
- Below a certain width, the charge carriers can tunnel through the depletion region.
- Because the total charge on either side of the depletion region must cancel out.
- The charge generation rate is related to specific crystallographic defects within the depletion region.
- In a PIN diode, the depletion region exists almost completely within the intrinsic region.
- The factor mainly accounts for carrier recombination as the charge carriers cross the depletion region.
- This structure suggests that there is no depletion region to separate the device from the substrate.
- The depletion region will quickly dissipate.
- The depletion region of a PIN structure extends across the intrinsic region, deep into the device.
- However, the width of the depletion region ( called the depletion width ) cannot grow without limit.
- But only those electron-hole pairs generated in and near the depletion region contribute to current generation.
- The shape of the depletion region creates a wider channel, allowing more current to flow through it.
- Therefore, letting D and \ Delta V represent the entire depletion region and the potential difference across it,
- Because the length of the depletion region is narrow and the band gap is high, electrons can tunnel.
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